Phase change memory thesis

Drift resilience is achieved through the use of specific non-resistance-based cell-state metrics which, in contrast to the traditional cell-state metric, i.

Phase change random access memory a scalable technology

Although PCM chips have already been mass-produced by companies like Micron and Samsung, their capacity was limited as they were based on single-level cell SLC storage. The model can also be used for fine-tuning the material properties, device design and geometry to improve the efficacy of these devices. However, with Flash memory devices facing serious scalability limits, there is an imminent need to explore the viability of other non-volatile memory technologies that can replace or complement Flash-based storage in the near future. As a Back-End, metallization-based process, ePCM is technology-independent, so it can be embedded in virtually any technology node. Significant research efforts have been invested by various universities and research organization across the globe into realizing the so-called next-generation memories NGMs. The model is validated by comparing the simulation results with experimental measurements. This is the same genre of materials as have been widely used in laser driven optical storage rewritable CDs and DVDs during the past 20 years or so. In the domain of non-volatile memory systems, Flash-based storage devices have dominated the consumer space for the past 15 years and have also entered the enterprise storage system in the past years. The primary research focus of this thesis is on increasing the memory capacity by storing more than one bit of information per device, known as multilevel-cell MLC. Drift resilience is achieved through the use of specific non-resistance-based cell-state metrics which, in contrast to the traditional cell-state metric, i. Phase-Change Memory PCM technology is not new as the principle of storing information in chalcogenide-based materials was first explored in the s. This single-bit alterability simplifies software handling of data storage.

Significant research efforts have been invested by various universities and research organization across the globe into realizing the so-called next-generation memories NGMs. Although PCM chips have already been mass-produced by companies like Micron and Samsung, their capacity was limited as they were based on single-level cell SLC storage.

Phase change memory future

Significant research efforts have been invested by various universities and research organization across the globe into realizing the so-called next-generation memories NGMs. In the domain of non-volatile memory systems, Flash-based storage devices have dominated the consumer space for the past 15 years and have also entered the enterprise storage system in the past years. New NVM technologies, based on the functional properties of particular exotic materials, employ radically different physical mechanisms than those used with Flash memory technologies and provide a more effective solution to the process integration difficulties raised by the disruptive 28nm CMOS transition. As a Back-End, metallization-based process, ePCM is technology-independent, so it can be embedded in virtually any technology node. PCM, which reads and writes at low voltage, offers several substantial advantages over Flash and other embedded memory technologies. Drift resilience is achieved through the use of specific non-resistance-based cell-state metrics which, in contrast to the traditional cell-state metric, i. Athmanathan, Aravinthan ; Leblebici, Yusuf ; Stanisavljevic, Milos In the modern digital era of big data applications, there is an ever-increasing demand for higher memory capacity that is both reliable and cost effective. The model can also be used for fine-tuning the material properties, device design and geometry to improve the efficacy of these devices. In this thesis, a comprehensive thermoelectric model is proposed for investigating the thermoelectrics physics in PCM device operation. Phase-Change Memory PCM technology is not new as the principle of storing information in chalcogenide-based materials was first explored in the s. The model is validated by comparing the simulation results with experimental measurements.

These states, which correspond to logic 0 and 1, are electrically differentiated by high resistance in the amorphous state logic 0 and low resistance in the crystalline state Logic 1.

In the domain of non-volatile memory systems, Flash-based storage devices have dominated the consumer space for the past 15 years and have also entered the enterprise storage system in the past years.

This single-bit alterability simplifies software handling of data storage.

overview of phase change chalcogenide nonvolatile memory technology

This is the same genre of materials as have been widely used in laser driven optical storage rewritable CDs and DVDs during the past 20 years or so. The model is validated by comparing the simulation results with experimental measurements.

PCM, which reads and writes at low voltage, offers several substantial advantages over Flash and other embedded memory technologies.

Phase change memory thesis

Athmanathan, Aravinthan ; Leblebici, Yusuf ; Stanisavljevic, Milos In the modern digital era of big data applications, there is an ever-increasing demand for higher memory capacity that is both reliable and cost effective. In this thesis, a comprehensive thermoelectric model is proposed for investigating the thermoelectrics physics in PCM device operation. PCM, which reads and writes at low voltage, offers several substantial advantages over Flash and other embedded memory technologies. The model can also be used for fine-tuning the material properties, device design and geometry to improve the efficacy of these devices. Advisor s :. These states, which correspond to logic 0 and 1, are electrically differentiated by high resistance in the amorphous state logic 0 and low resistance in the crystalline state Logic 1. However, with the predominance of charge-based memory technology DRAM, Flash storage, etc thriving thanks to the technological advancements ofmetal-oxide semiconductor field-effect transistor MOSFET based devices, it was not until the late 90s that renewed interest in the class of phase-change materials was ignited. This single-bit alterability simplifies software handling of data storage. Phase-Change Memory PCM technology is not new as the principle of storing information in chalcogenide-based materials was first explored in the s. The model is validated by comparing the simulation results with experimental measurements.
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